Electricity: measuring and testing – Fault detecting in electric circuits and of electric components – Of individual circuit component or element
Reexamination Certificate
1998-10-13
2001-01-30
Nguyen, Vinh P. (Department: 2858)
Electricity: measuring and testing
Fault detecting in electric circuits and of electric components
Of individual circuit component or element
C324S760020
Reexamination Certificate
active
06181145
ABSTRACT:
BACKGROUND OF THE INVENTION
1. Field of the Invention
The present invention relates to a probe card for use in a test of an IC (integrated circuit) device in the form of a wafer, a die, etc. More particularly, the present invention relates to a probe card which uses a wiring pattern on a membrane to provide electrical connection between test channels of a testing apparatus and signal terminals of an IC device under test (hereinafter, also referred to as a “DUT”).
2. Description of the Related Art
Recent advancement in semiconductor microfabrication has allowed a higher-speed, multiple-pin, high-performance IC device to be formed within a small area. Recent trend toward smaller portable equipment has demanded a smaller-volume mounting package for IC devices, and some small packages are already in practical use, such as CSP (Chip Scale Package) which employs a flip chip mounting method. Moreover, in order to meet the demand for a device realizing a smaller size with more pins, an “area pad” device has recently been proposed in which bonding pads (hereinafter, also referred to simply as “pads”) are provided not only in the periphery of the device but over the entire surface of the device.
A probe card used for testing such IC devices is required to be capable of providing a very accurate waveform to, and rapidly and accurately reading a waveform from, the IC device via the densely-arranged pads.
Conventional probe cards can be generally classified into a needle type probe card having a pad connecting section formed of tungsten needles, and a membrane type probe card having a pad connecting section configured using microstrip-line signal wiring and tungsten contact bumps. While the needle type probe card is the mainstream in the industry, the use of the membrane type probe card is growing in recent years as the demand for high-speed, multiple-pin IC devices grows.
Examples of the conventional probe card have been described in, for example, U.S. Pat. No. 4,906,920, and “A BiCMOS Active Substrate ProbeCard Technology for Digital Testing” on ISSCC 1996 Technical Digest, p. 308. The former describes a method for ensuring the electrical connection of contact bumps. The latter describes a method for providing a test chip in the vicinity of contact bumps in order to realize high-speed testing. The test chip serves as an interface between a DUT and a testing apparatus by buffering test data from the DUT and compensating for the function of the testing apparatus (e.g., an LSI test system).
With the conventional membrane type probe, however, it is difficult to ensure the electrical connection of the contact bumps. Thus, it is required to establish satisfactory electrical connection between the DUT and the pads even when heights of the contact bumps provided on the membrane vary.
Moreover, when using the conventional membrane type probe, it is difficult to realize a high-speed testing due to physical distance from the testing apparatus. In order to test a multiple-pin DUT at a high speed, a novel structure is needed for placing the test chip closer to the contact bumps so as to obtain the satisfactory electrical connection. Typically, however, a length of a printed board section is several tens of centimeters, and a length of the pad connection section is several centimeters, whereby an electrical length (transmission time) Td for a signal from a tester channel to the pad of the DUT is several nanoseconds. In order to reduce the transmission time Td, the distance between the tester channel to the DUT needs to be further reduced.
However, a conventional testing apparatus (LSI test system) capable of testing a multiple-pin DUT is costly, and large in size and must therefore be placed distant from the DUT.
Moreover, the number of tester channels which can be obtained by the state-of-the-art technology is about 1000, being less than the number of pins which can be provided on an area pad device. As a result, the design of a semiconductor IC device is limited by the number of pins on the test apparatus.
SUMMARY OF THE INVENTION
A probe card of the present invention provides electrical connection between an IC device under test (DUT) and a testing apparatus. The probe card includes: a test chip for transferring a signal between the DUT and the testing apparatus; and a contact bump provided at a position corresponding to a pad of the test chip, wherein the test chip is provided to securely press the contact bump against the DUT, thereby establishing the electrical connection between the DUT and the contact bump.
In particular, a probe card further includes a membrane provided between the contact bump and the test chip, wherein: the membrane has wiring for electrically connecting the contact bump, the test chip and the testing apparatus to one another; and the test chip securely presses the contact bump against the DUT from a reverse side of the membrane.
In one embodiment, a bump electrode is provided on the reverse side of the membrane so as to be connected to the contact bump; the test chip is flip-chip mounted to the bump electrode with a connection bump; and height variation among the contact bumps is compensated for by a change in height of the connection bump resulting from deformation thereof, whereby an uneven surface defined by tips of the contact bumps is aligned with a surface defined by the pads of the DUT.
The uneven surface defined by tips of the contact bumps may be pre-fixed so as to be aligned with the surface defined by the pads of the DUT.
In another embodiment, a bump electrode is provided on the reverse side of the membrane so as to be connected to the contact bump; the test chip is flip-chip mounted to the bump electrode via a bumper electrode array including an insulative elastic body and a plurality of relay electrodes running through the insulative elastic body; and height variation among the contact bumps is compensated for by the bumper electrode array having a variable thickness, whereby an uneven surface defined by tips of the contact bumps is aligned with a surface defined by the pads of the DUT.
In one embodiment, a probe card further includes: a test chip securing plate provided on a reverse surface of the test chip; and a securing plate holding mechanism for supporting the test chip securing plate, wherein the securing plate holding mechanism is supported about a rotational axis perpendicular to a longitudinal direction of the pads of the DUT.
The securing plate holding mechanism may support the test chip securing plate at a center of gravity of the pads of the DUT.
A probe card may further include a temperature control section provided on the test chip securing plate, wherein the temperature control section is used to control a temperature of the test chip.
In one embodiment, a probe card further includes: a hermetic structure provided on the reverse side of the membrane; and an insulative coolant filled in the hermetic structure into which the test chip is placed, wherein temperature control for the membrane and the test chip is performed by controlling a temperature of the coolant.
In one embodiment, the test chip includes: a plurality of tester channel pads to which a plurality of tester channels of the testing apparatus are connected, respectively; a plurality of device channel pads connected to the contact bumps, respectively; and a tri-state buffer, wherein one of the tester channel pads which is used only for inputting a signal to the testing apparatus and another one of the tester channel pads which is only used for outputting a signal from the testing apparatus are connected to one of the device channel pads via a tri-state buffer as a pair of the tester channel pads; and a tri-state control input for the tri-state buffer is connected to the tester channel pad and is controlled directly by the testing apparatus.
A load circuit may be connected to the device channel pad in the test chip.
The test chip may include: a plurality of bi-directional multiplexers for selectively connecting signals from the tester channel pads to the plurality of device channel pa
Tomita Yasuhiro
Yamaguchi Seiji
Matsushita Electric - Industrial Co., Ltd.
Nguyen Vinh P.
Ratner & Prestia
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