Prioritizing efforts to improve semiconductor production yield

Semiconductor device manufacturing: process – With measuring or testing – Optical characteristic sensed

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324765, 438 17, 382145, H01L 2166

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056656092

ABSTRACT:
A method for identifying those process steps which produce "high risk" particulate contamination that is most likely to produce defects. The die positions of particulate deposits on a wafer are measured prior to and subsequent to a specific process step, to determine the die positions of particulate deposits introduced during that specific process step. Then, subsequent electrical tests of the wafer are used to determine which locations on the wafer contain faulty circuitry. The locations of particulate deposits introduced during the specific process step are then correlated to the locations of faulty circuitry. The result is a measure of the extent to which particulate deposits introduced during the specific process step contribute to reductions in yield of the manufacturing process.

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Borden et al, "Benfits of Real-Time, Insitu Particle Monitoring In Production Current Implantation", IEE Trasactions on Semiconductor Manufacturing, vol. 2 No. 4, Nov. 1989, pp. 141-145.
Carman et al, "Isolating the Killer Defect: Process Analysis Using Particle Map to Probe Map Correlation", IEEE/SEMI Advanced Semiconductor Manufacturing Conference and Workshop, 18-19 Oct. 1993.

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