Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified configuration
Reexamination Certificate
2008-07-01
2008-07-01
Jackson, Jerome (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Of specified configuration
C257S686000, C257S723000, C257S724000, C257S780000
Reexamination Certificate
active
11227161
ABSTRACT:
An inline memory module (IMM) architecture may include: a printed circuit board (PCB); a first array of memory devices on a first side of the PCB; a second array of memory devices on a second side of the PCB; at least some of the memory devices of the first array being arranged so as to substantially overlap, relative to a reference axis of the PCB, positional-twin memory devices of the second array, respectively; and multiple vias at least some of which are parts of respective signal paths that connect signal leads of a first memory device in the first array to corresponding signal leads of a second memory device in the second array that is adjacent to a positional-twin third memory device in the second array corresponding to the first memory device.
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Kim Moon-Jung
Lee Jong-Joo
Jackson Jerome
Valentine Jami M
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