Semiconductor device manufacturing: process – Making passive device
Reexamination Certificate
2006-06-06
2006-06-06
Nelms, David (Department: 2818)
Semiconductor device manufacturing: process
Making passive device
C361S301100
Reexamination Certificate
active
07056800
ABSTRACT:
One of a plurality of capacitors embedded in a printed circuit structure includes a first electrode (415) overlaying a first substrate layer (505) of the printed circuit structure, a crystallized dielectric oxide core (405) overlaying the first electrode, a second electrode (615) overlying the crystallized dielectric oxide core, and a high temperature anti-oxidant layer (220) disposed between and contacting the crystallized dielectric oxide core and at least one of the first and second electrodes. The crystallized dielectric oxide core has a thickness that is less than 1 micron and has a capacitance density greater than 1000 pF/mm2. The material and thickness are the same for each of the plurality of capacitors. The crystallized dielectric oxide core may be isolated from crystallized dielectric oxide cores of all other capacitors of the plurality of capacitors.
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Croswell Robert T.
Dunn Gregory J.
Lempkowski Robert B.
Savic Jovica
Tungare Aroon V.
Lamb James A.
Motorola Inc.
Nelms David
Tran Long
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