Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Passive components in ics
Reexamination Certificate
2006-10-19
2010-06-15
Dickey, Thomas L (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Integrated circuit structure with electrically isolated...
Passive components in ics
C257S295000, C257SE27048
Reexamination Certificate
active
07737529
ABSTRACT:
The invention provides a PCB with a thin film capacitor embedded therein and a method for manufacturing the same. The PCB includes a lower electrode formed on an insulating substrate; an amorphous paraelectric film formed on the lower electrode via low temperature film formation; a buffer layer formed on the amorphous paraelectric film; a metal seed layer formed on the buffer layer; and an upper electrode formed on the metal seed layer.
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Japanese Office Action issued in Japanese Patent Application No. JP 2006-285346 dated Feb. 17, 2009.
Chung Yul Kyo
Jung Hyung Mi
Lee Seung Eun
Moon Jin Seok
Sohn Seung Hyun
Dickey Thomas L
Erdem Fazli
McDermott Will & Emery LLP
Samsung Electro-Mechanics Co. Ltd.
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