Active solid-state devices (e.g. – transistors – solid-state diode – Organic semiconductor material
Reexamination Certificate
2011-06-14
2011-06-14
Jackson, Jr., Jerome (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Organic semiconductor material
C257S039000, C257S642000, C257SE39007, C257SE51001
Reexamination Certificate
active
07960718
ABSTRACT:
Fabrication of thin-film transistor devices on polymer substrate films that is low-temperature and fully compatible with polymer substrate materials. The process produces micron-sized gate length structures that can be fabricated using inkjet and other standard printing techniques. The process is based on microcrack technology developed for surface conduction emitter configurations for field emission devices.
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Nagahara et al, “Directed placement of suspended carbon nanotubes for nanometer-scale assembly” American Institute of Physics magazine, May 2002, vol. 80, No. 20, 3 pages.
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International Search Report and Written Opinion for PCT/IB2007/003071 mailed Apr. 3, 2008, 14 pages.
Fink Richard Lee
Yaniv Zvi
Applied Nanotech Holdings, Inc.
Jackson, Jr. Jerome
Kordzik Kelly
Matheson Keys Garsson & Kordzik PLLC
Page Dale
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