Printable thin-film transistor for flexible electronics

Active solid-state devices (e.g. – transistors – solid-state diode – Organic semiconductor material

Reexamination Certificate

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C257S039000, C257S642000, C257SE39007, C257SE51001

Reexamination Certificate

active

07960718

ABSTRACT:
Fabrication of thin-film transistor devices on polymer substrate films that is low-temperature and fully compatible with polymer substrate materials. The process produces micron-sized gate length structures that can be fabricated using inkjet and other standard printing techniques. The process is based on microcrack technology developed for surface conduction emitter configurations for field emission devices.

REFERENCES:
patent: 2003/0062816 (2003-04-01), Terada et al.
patent: 2006/0006377 (2006-01-01), Golovchenko et al.
patent: 2006/0027860 (2006-02-01), Nomoto
patent: 2006/0086976 (2006-04-01), Mardilovich et al.
Nagahara et al, “Directed placement of suspended carbon nanotubes for nanometer-scale assembly” American Institute of Physics magazine, May 2002, vol. 80, No. 20, 3 pages.
Li et al. “Friction transfer deposition of ordered conjugated polymer nanowires and transistor fabrication” American Institute of Physics magazine, Aug. 2005, vol. 87, No. 6, 3 pages.
International Search Report and Written Opinion for PCT/IB2007/003071 mailed Apr. 3, 2008, 14 pages.

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