Semiconductor device manufacturing: process – Bonding of plural semiconductor substrates
Reexamination Certificate
2005-09-06
2005-09-06
Chaudhuri, Olik (Department: 2823)
Semiconductor device manufacturing: process
Bonding of plural semiconductor substrates
C438S458000, C257S347000
Reexamination Certificate
active
06939783
ABSTRACT:
A preventive treatment method for a multilayer semiconductor wafer is described. The semiconductor wafer includes a supporting substrate, at least one intermediate layer and a surface layer in which an intermediate layer has an exposed lateral edge and the wafer is to be subjected to a subsequent treatment. The method includes encapsulating the exposed lateral edge of the intermediate layer with a portion of the surface layer to prevent attack on the peripheral edge during the subsequent treatment.
REFERENCES:
patent: 4795718 (1989-01-01), Beitman
patent: 4952526 (1990-08-01), Pribat et al.
patent: 5426073 (1995-06-01), Imaoka et al.
patent: 5723385 (1998-03-01), Shen et al.
patent: 6150696 (2000-11-01), Iwamatsu et al.
patent: 6232201 (2001-05-01), Yoshida et al.
patent: 1 158 581 (2001-11-01), None
patent: 7161948 (1995-06-01), None
patent: 2000299451 (2000-10-01), None
patent: WO 01/15218 (2001-11-01), None
patent: WO 03/005434 (2003-01-01), None
Jean-Pierre Colinge, “Silicon-On-Insulator Technology: Materials to VSLI”, 2nd Edition“ by, published by “Kluwer Academic Publishers”, at pp. 50 an 51.” 1997.
Maleville Christophe
Neyret Eric
Chaudhuri Olik
Malsawma Lex H.
S.O.I.Tec Silicon on Insulator Technologies S.A.
Winston & Strawn LLP
LandOfFree
Preventive treatment method for a multilayer semiconductor... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Preventive treatment method for a multilayer semiconductor..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Preventive treatment method for a multilayer semiconductor... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3395207