Prevention of photoelectric conversion layer contamination in an

Details Prevention of photoelectric conversion layer contamination in an Prevention of photoelectric conversion layer contamination in an

1997-10-08

1999-12-07

Westin, Edward P.

Radiant energy

Invisible radiant energy responsive electric signalling

Semiconductor system

25037014, 257444, G01T 124

Patent

active

059987944

ABSTRACT:
A semiconductor imaging device comprising MOS or CMOS pixel circuits having pixel pads separated by insulating material and having a conductive migration blocking layer applied over the pixel pads. The conductive migration blocking layer comprises an electrically conductive material that is inert with respect to selected photoelectric conversion layer materials, and may be formed as individual contacts, or formed as a deposited layer and etched to form distinct pixels covering the underlying pixel pad material. Thereafter, a photoelectric conversion layer is applied over the migration blocking layer material. The basic device is completed by applying a field electrode layer over the photoelectric conversion layer.

REFERENCES:
patent: 4559552 (1985-12-01), Yamazaki
patent: 4889565 (1989-12-01), Fan et al.
patent: 4923524 (1990-05-01), Kiss
patent: 5235195 (1993-08-01), Tran et al.

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