Electrical transmission or interconnection systems – Nonlinear reactor systems – Parametrons
Patent
1989-02-10
1991-09-24
Miller, Stanley D.
Electrical transmission or interconnection systems
Nonlinear reactor systems
Parametrons
357 47, 307303, H03K 301, H03K 326
Patent
active
050516124
ABSTRACT:
A method of preventing forward biasing of PN junctions in junction isolated semiconductor devices to prevent parasitic transistor action. A biasing element is connected to the substrate/isolation regions to switch the regions to a low potential. The method is particularly well suited for implementation in the new multi-epitaxial semiconductor processes and structures.
REFERENCES:
patent: 3649887 (1972-03-01), Keller et al.
patent: 3931634 (1976-01-01), Knight
patent: 4115709 (1978-09-01), Inoue et al.
patent: 4578695 (1986-03-01), Delaporte et al.
patent: 4633095 (1986-12-01), Komatu
patent: 4704705 (1987-11-01), Womack
patent: 4888623 (1989-12-01), Enomoto et al.
"Isolation Method and Structure for Integrated Devices", IBM Technical Disclosure Bulletin, by Pieczonka et al., vol. 8, No. 4, Sep. 1965.
Barndt B. Peter
Comfort James T.
Miller Stanley D.
Roseen Richard
Sharp Melvin
LandOfFree
Prevention of parasitic mechanisms in junction isolated devices does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Prevention of parasitic mechanisms in junction isolated devices, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Prevention of parasitic mechanisms in junction isolated devices will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1698690