Prevention of counterfeit markings on semiconductor devices

Details Prevention of counterfeit markings on semiconductor devices Prevention of counterfeit markings on semiconductor devices

2007-01-02

2007-01-02

Watkins, III, William P. (Department: 1772)

Stock material or miscellaneous articles

Structurally defined web or sheet

Including aperture

C428S137000, C264S400000, C264S916000, C257S797000, C257S048000, C257S788000, C257S790000, C257S787000, C257S678000, C438S014000, C438S015000, C438S016000, C438S126000

Reexamination Certificate

active

10212950

ABSTRACT:
A lidded semiconductor device has a first layer applied to the lid, which first layer is chosen of a material which fluoresces upon application of non-visible electromagnetic waves thereto, for example, ultraviolet light. A second layer is provided over the first layer. Openings extend through the second layer and further extend to a substantial depth into the first layer, for example, generally halfway into the first layer, to expose portions of the first layer.

REFERENCES:
patent: 5418855 (1995-05-01), Liang et al.
patent: 5985377 (1999-11-01), Corbett
patent: 6181017 (2001-01-01), Hatchard et al.
patent: 6280797 (2001-08-01), Kuczynski et al.
patent: 6331735 (2001-12-01), Blish et al.
patent: 6339728 (2002-01-01), Nguyen et al.
patent: 6432796 (2002-08-01), Peterson
patent: 6576496 (2003-06-01), Bolken et al.

Affiliated with

Also associated with

Rating

Prevention of counterfeit markings on semiconductor devices does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Prevention of counterfeit markings on semiconductor devices, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Prevention of counterfeit markings on semiconductor devices will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3776669