Prevention of agglomeration and inversion in a semiconductor pol

Details Prevention of agglomeration and inversion in a semiconductor pol Prevention of agglomeration and inversion in a semiconductor pol

1994-07-29

1996-05-21

Fourson, George

Fishing, trapping, and vermin destroying

437192, 437200, H01L 2144

Patent

active

055189580

ABSTRACT:
Conductors are fabricated by forming a layer of doped polysilicon on a semiconductor substrate, forming a nitrogen-enriched conductive layer on the layer of doped polysilicon, wherein nitrogen contained in the nitrogen-enriched conductive layer provides for improved thermal stability thereof, and patterning the nitrogen-enriched conductive layer and layer of doped polysilicon so as to form the conductors.

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