Coating processes – Direct application of electrical – magnetic – wave – or... – Pretreatment of substrate or post-treatment of coated substrate
Patent
1993-03-03
1994-05-03
King, Roy V.
Coating processes
Direct application of electrical, magnetic, wave, or...
Pretreatment of substrate or post-treatment of coated substrate
427533, 427249, 427122, 428408, 423446, B05D 306
Patent
active
053086619
ABSTRACT:
A process is disclosed for the pretreatment of a carbon-coated substrate to provide a uniform high density of nucleation sites thereon for the subsequent deposition of a continuous diamond film without the application of a bias voltage to the substrate. The process comprises exposing the carbon-coated substrate, in a microwave plasma enhanced chemical vapor deposition system, to a mixture of hydrogen-methane gases, having a methane gas concentration of at least about 4% (as measured by partial pressure), while maintaining the substrate at a pressure of about 10 to about 30 Torr during the pretreatment.
REFERENCES:
patent: 5169676 (1992-12-01), Moran et al.
Feng, Z., et al., "Growth of Diamond Films on Various Carbon Coatings with Microwave Plasma Enhanced CVD" Publication No. LBL-32744, Lawrence Berkeley Laboratory, University of California, Berkeley, Calif. 1992, pp. 1-8.
Geis, Michael W., et al., "Diamond Film Semiconductors", Scientific American, Oct., 1992, pp. 84-89.
Meilunas, R. J., et al., "Nucleation of Diamond Films on Surfaces Using Carbon Clusters", Appl. Phys. Lett., vol. 59, No. 26, Dec. 23, 1991, pp. 3461-3463.
Brewer Marilee
Brown Ian
Feng Zhu
Komvopoulos Kyriakos
King Roy V.
Martin Paul R.
Moss Kathleen S.
Ross Pepi
The Regents of the University of California
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