Pretreatment of photoresist masking layers resulting in higher t

Metal treatment – Process of modifying or maintaining internal physical... – Chemical-heat removing or burning of metal

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148 15, 156643, 427 35, 427 431, H01L 2126, B05D 306

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active

042538882

ABSTRACT:
Method for the production of an LSI circuit device, in which method an organic compound film such as photoresist films is suitably treated to become a heat resistant film and it is used in various production processes as a mask pattern at a temperature of more than 200.degree. C. without deforming the original size of the mask pattern.

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patent: 3920483 (1975-11-01), Johnson, Jr. et al.
patent: 4004044 (1977-01-01), Franco et al.
patent: 4024293 (1977-05-01), Hatzakis
patent: 4103064 (1978-07-01), McAlear
Alcorn et al., "Lift-Off Technique . . . ", IBM-TDB, 20 (1978), 4009.
Kleinfelder et al., "Ion-Bombardment . . . Polymers", IBM-TDB, 14 (1972), 2899.
Johnson et al., "Single Coat Photoresist . . . ", IBM-TDB, 19, (1976), 859.
Report, "An Introduction to Photofabrication . . . ", Kodak Publ. No. P-79, 1967, p. 26.
Dearnaly et al., (editors), Ion-Implantation, North-Holland, London, 1973, p. 507.
Beyer et al., "Forming Organic Si-Layer . . . ", IBM-TDB, 17, (1974), 1600.

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