Pressureless sintering process to produce high thermal conductiv

Details Pressureless sintering process to produce high thermal conductiv Pressureless sintering process to produce high thermal conductiv

1985-04-29

1986-03-25

McCarthy, Helen M.

Plastic and nonmetallic article shaping or treating: processes

Including step of generating heat by friction

264 61, 264 63, 264 66, 428698, 501 96, 501 98, C04B 3558, F27D 706

Patent

active

045782326

ABSTRACT:
A process for producing an aluminum nitride ceramic body having a composition defined and encompassed by polygon LT1DM but not including lines LM and DM of FIG. 4, a porosity of less than about 10% by volume, and a thermal conductivity higher than 1.00 W/cm.multidot.K at 25.degree. C. which comprises forming a mixture comprised of aluminum nitride powder containing oxygen, yttrium oxide, and free carbon, shaping said mixture into a compact, said mixture and said compact having a composition wherein the equivalent % of Yttrium and aluminum ranges from point T1 up to point M of FIG. 4, said compact having an equivalent % composition of Y, Al, O and N outside the composition defined and encompassed by polygon LT1DM of FIG. 4, heating said compact to a temperature at which its pores remain open reacting said free carbon with oxygen contained in said aluminum nitride producing a deoxidized compact, said deoxidized compact having a composition wherein the equivalent % of A1, Y, O and N is defined and encompassed by polygon LT1DM but not including lines LM and DM of FIG. 4, and sintering said deoxidized compact at a temperature of at least about 1855.degree. C. producing said ceramic body.

REFERENCES:
patent: 3833389 (1974-09-01), Komeya et al.
patent: 3930875 (1976-01-01), Ochiai et al.
patent: 4097293 (1978-06-01), Komeya et al.
patent: 4203733 (1980-05-01), Tanaka et al.
patent: 4435513 (1984-03-01), Komeya et al.
patent: 4478785 (1984-10-01), Huseby et al.
patent: 4519966 (1985-05-01), Aldinger et al.
patent: 4533645 (1985-08-01), Huseby et al.
patent: 4540673 (1985-09-01), Takeda et al.
patent: 4547471 (1985-10-01), Huseby et al.
Werdecker, W. et al., "Aluminum Nitride--An Alternative Ceramic Substrate for High Power Applications in Micro Circuits" pp. 402-406, IEEE May 1984.
K. Shinozaki, et al., "Sintering Behavior and Thermal Characteristics of Pressureless Sintered AlN with Y.sub.2 O.sub.3 Addition," 22nd Symposium on Basic Science of Ceramics, Yogyo-Kyokai, Jan. 1984, p. 43.
Ceramic Bulletin (American Ceramic Society), vol. 63, No. 8 (1984), p. 1009.
Heraeus PS-B-80 4 pages.
"Effects of Various Additives on Sintering of Aluminum Nitride", Komeya et al.--Yogyo-Kyokai-shi, 89(6) 1981, pp. 58-64.
"Science of Ceramics", vol. 6, 1973, pp. XX/3-XX13.
Komeya et al., Trans. & J. Brit. Ceram. Soc., 70(3), pp. 107-113 (1971), "The Influence of Fibrous Aluminum Nitride on the Strength of Sintered AlN-Y.sub.2 O.sub.3 ".
Advanced Optical Ceramics, Phase III, Final Report, DIN:82SDR2006, Feb. 1982, pp. 4-68 to 4-80 and 4-127 to 4-137.
Slack, G. A. "Nonmetallic Crystals with High Thermal Conductivity", J. Phys. Chem. Solids, 1973, vol. 34, pp. 321-335.
Litvinenko, V. F. et al., "Thermophysical Properties of Aluminum Nitride-Yttria Materials", translated from Poroshkovaya Metallurgiya., No. 6(246), pp. 77-79, 490-492, Jun. 1983.
Schwetz, K. A. et al., "Sintering of Aluminum Nitride with Low Oxide Addition", Schwetz, Progress in Nitrogen Ceramics (1983) pp. 245-252.
Iwase, N. et al., "Development of a High Thermal Conductive AlN Ceramic Substrate Technology", The International Journal for Hybrid Microelectronics, vol. 7, #4, Dec. 1984.

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