Pressureless method of forming a silicon carbide ceramic materia

Details Pressureless method of forming a silicon carbide ceramic materia Pressureless method of forming a silicon carbide ceramic materia

1979-06-18

1981-01-13

Arnold, Donald J.

Plastic and nonmetallic article shaping or treating: processes

Pore forming in situ

By mechanically introducing gas into material

106 44, 264 66, C04B 3556

Patent

active

042449022

ABSTRACT:
A method of forming a silicon carbide ceramic material without forming large areas of a feathered alpha silicon carbide microstructure is disclosed. Basically, the method involves heating the silicon carbide material to a temperature in a range from about 1850.degree. C. to about 1920.degree. C., preferably about 1900.degree. C., and maintaining the material at the selected temperature for a period of time from about 6 hours to about 12 hours. Such a heating cycle produces silicon carbide ceramic material which does not have large areas of a feathered alpha silicon carbide microstructure therein.

REFERENCES:
patent: 3998646 (1976-12-01), Weaver
patent: 4041117 (1977-08-01), Prochazka
patent: 4080415 (1978-03-01), Coppola et al.
patent: 4120827 (1978-10-01), Boos et al.
patent: 4135938 (1979-01-01), Murata et al.

Affiliated with

Also associated with

Rating

Pressureless method of forming a silicon carbide ceramic materia does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Pressureless method of forming a silicon carbide ceramic materia, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Pressureless method of forming a silicon carbide ceramic materia will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2231028