Pressure-welded semiconductor device

Details Pressure-welded semiconductor device Pressure-welded semiconductor device

2006-01-17

2006-01-17

Zarneke, David A. (Department: 2891)

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

Reexamination Certificate

active

06987320

ABSTRACT:
In a pressure-welded semiconductor device where at least one semiconductor element is disposed inside a casing, a buffer conductive layer including conductive carbons is disposed at pressure-welded portions between first casing-side electrodes and element-side electrodes disposed on a first main surface and at pressure-welded portions between second casing-side electrodes and element-side electrodes disposed on a second main surface.

REFERENCES:
patent: 6232706 (2001-05-01), Dai et al.
patent: 6297063 (2001-10-01), Brown et al.
patent: 6340822 (2002-01-01), Brown et al.
patent: 6383923 (2002-05-01), Brown et al.
patent: 6652658 (2003-11-01), Mori et al.
patent: 6652958 (2003-11-01), Tobita
patent: 6864571 (2005-03-01), Arik et al.
patent: 2000-68297 (2000-03-01), None
patent: 2002-329723 (2002-11-01), None
patent: WO 02/26479 (2002-04-01), None
P. G. Collins, et al., Science, www.sciencemag.org., vol. 292, pp. 706-709, “Engineering Carbon Nanotubes and Nanotube Circuits Using Electrical Breakdown”, Apr. 27, 2001.

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