Pressure transducer utilizing diamond piezoresistive sensors and

Details Pressure transducer utilizing diamond piezoresistive sensors and Pressure transducer utilizing diamond piezoresistive sensors and

1992-08-11

1994-04-19

Chilcot, Jr., Richard E.

Measuring and testing

Fluid pressure gauge

Diaphragm

73721, 338 4, G01L 708, G01L 906

Patent

active

053035941

ABSTRACT:
A pressure transducer employing at least one piezoresistive sensor fabricated from diamond. The diamond piezoresistive sensors are formed on a dielectric layer fabricated from silicon dioxide. The dielectric layer is formed on a silicon carbide force collector. In addition, the silicon carbide force collector may be fabricated from .alpha.-silicon carbide or p-type silicon carbide.

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patent: 5165283 (1992-11-01), Kurtz et al.
"High Voltage 6H-SiC p-n Junction Diodes", Applied Physics Letters, vol. 59, No. 14 Matus, et al., Sep. 1991 pp. 1770-1772.
"Diamond Depositions: Science and Technology", Superconductivity Publications, Nov. 1991 pp. 1, 5-7.
"Recent Developments in SiC (USA)", Powell et al. Dec. 1987.
"Electrical Characterization of the Oxide-Silicon Carbide Interface by MOS Conductance Techniques", Dept. of Engineering University of Notre Dame, Chaudry, et al. 1986.
"Selective Growth of Poly-Diamond Thin Films Using Selective Damaging by Ultrasonic Agitation on a Variety of Substrates", Dept. of Electrical Engineering, Auburn University, Ramesham, et al. 1991.

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