Pressure transducer and system for cryogenic environments

Details Pressure transducer and system for cryogenic environments Pressure transducer and system for cryogenic environments

1991-04-23

1992-05-26

Woodiel, Donald O.

Measuring and testing

Fluid pressure gauge

Diaphragm

73708, 73727, 73756, 338 4, G01L 708, G01L 906, G01L 1914

Patent

active

051163314

ABSTRACT:
A silicon pressure die is bonded to a borosilicate substrate above a pneumatic port. A Wheatstone bridge circuit is formed on the silicon pressure die and has bridge elements of silicon doped with boron to a deposit density level of approximately 1.times.10.sup.19 -10.sup.21 boron/cm.sup.3. A current source is provided to excite the Wheatstone bridge circuit. In addition, a temperature sensor is provided to provide temperature readings.

REFERENCES:
patent: 3930412 (1976-01-01), Mallon et al.
S. K. Kahng and J. J. Chapman, "Piezoresistive Silicon Pressure Sensors in Cryogenic Environment", ISA Paper #89-0066 (1989).
G. Wallis and D. I. Pomerantz, "Field Assisted Glass-Metal Sealing", J. App. Sci., vol. 40, No. 10, Sep. 1969.
3 IMO Delaval Inc. Articles: (1) 4-600-0001 Pressure Sensor; (2) Pressure Transducer Type 4-313; and (3) CEC 6000 Silicon Diaphragm Pressure Transducer.

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