Electricity: circuit makers and breakers – Multiple circuit control – Sequential operations
Reexamination Certificate
2011-06-21
2011-06-21
Figueroa, Felix O (Department: 2833)
Electricity: circuit makers and breakers
Multiple circuit control
Sequential operations
C200S512000
Reexamination Certificate
active
07964807
ABSTRACT:
A pressure switch employs semiconductor silicon on insulator (SOI) technology and utilizes a first silicon wafer with a deflecting diaphragm having two metal contacts deposited thereon. Secured to the silicon wafer is a glass wafer having a central aperture defining a deflecting region. Positioned on the glass wafer is third metal contact positioned to receive the two contacts deposited on the silicon wafer when a predetermined pressure is applied. As predetermined pressure is applied, the contacts on the silicon wafer will touch the contact on the glass wafer and a connection will be made between the silicon wafer contacts to create a low impedance path between the two contacts.
REFERENCES:
patent: 5286671 (1994-02-01), Kurtz et al.
patent: 6194678 (2001-02-01), Yoshikawa et al.
patent: 6272928 (2001-08-01), Kurtz
patent: 6639165 (2003-10-01), Newman et al.
patent: 6670562 (2003-12-01), Kaneko
patent: 7178403 (2007-02-01), Kurtz
patent: 2001/0025778 (2001-10-01), Ono
patent: 2007/0221488 (2007-09-01), Shin et al.
patent: 2007/0254796 (2007-11-01), Kurtz et al.
patent: 2009/0078547 (2009-03-01), Kurtz et al.
DeWeert Joseph Van
Kurtz Anthony D.
Figueroa Felix O
Kulite Semiconductor Products Inc.
Schutz, Esq. James E.
Shahriari Dean Y.
Troutman Sanders LLP
LandOfFree
Pressure switch employing silicon on insulator (SOI) technology does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Pressure switch employing silicon on insulator (SOI) technology, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Pressure switch employing silicon on insulator (SOI) technology will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2681648