Pressure sensor with silicon frit bonded cap

Measuring and testing – Fluid pressure gauge – Mounting and connection

Reexamination Certificate

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C073S753000, C257S415000

Reexamination Certificate

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11328415

ABSTRACT:
A pressure sensor apparatus and method that incorporates a silicon frit bonded cap. The pressure sensor includes a silicon sensor wafer with diaphragms at a bottom surface thereof, a silicon cap wafer mounted on the topside of each sensor wafer, a plurality of silicon sensor die formed on the sensor wafer, a silicon cap wafer etched to create a plurality of reference cavities on the topside of the diaphragm, a thin glass frit to form a wafer-to-wafer bond between the sensor wafer and cap wafer. Sensing devices such as semiconductor die/sensor, peizoresistors, can be used to sense the pressure. The wafer-to-wafer frit bonding improves the output signal drift and the thermal performance of the pressure sensor minimizes the thermal mismatch created by anodic bonded glass wafers.

REFERENCES:
patent: 5459351 (1995-10-01), Bender
patent: 6229190 (2001-05-01), Bryzek et al.
patent: 6845664 (2005-01-01), Okojie
patent: 6923069 (2005-08-01), Stewart
patent: 6945110 (2005-09-01), Selvakumar et al.
patent: WO 03/008921 (2003-01-01), None

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