Pressure sensor and manufacturing method thereof

Details Pressure sensor and manufacturing method thereof Pressure sensor and manufacturing method thereof

2005-03-01

2005-03-01

Hirshfeld, Andrew H. (Department: 2854)

Measuring and testing

Fluid pressure gauge

Diaphragm

C073S715000, C073S724000, C073S754000, C073S335110, C073S281000, C073S216000, C073S001220, C073S438000, C073S053060, C073S504020

Reexamination Certificate

active

06860154

ABSTRACT:
It is an object of the present invention to provide a touch mode capacitive pressure sensor having higher pressure durability than conventional sensors. In this invention, a touch mode capacitive pressure sensor has a diaphragm made from boron-doped silicon, and the boron concentration at the top face of the diaphragm is equal to or greater than 1×1019cm−3and less than 9×1019cm−3. Further, in this invention, a touch mode capacitive pressure sensor has a conductive diaphragm made by doping of an impurity and anisotropic etching, and the etch pit density on the top face of the diaphragm is equal to or less than five per μm2, and preferably equal to or less than one per μm2. As a result, the pressure durability of the diaphragm is greatly improved.

REFERENCES:
patent: 3993939 (1976-11-01), Slavin et al.
patent: 4092696 (1978-05-01), Boesen et al.
patent: 4203128 (1980-05-01), Guckel et al.
patent: 4332000 (1982-05-01), Petersen
patent: 4823230 (1989-04-01), Tiemann
patent: 4831492 (1989-05-01), Kuisma
patent: 4838088 (1989-06-01), Murakami
patent: 4993143 (1991-02-01), Sidner et al.
patent: 5186054 (1993-02-01), Sekimura
patent: 5241864 (1993-09-01), Addie et al.
patent: 5332469 (1994-07-01), Mastrangelo
patent: 5349873 (1994-09-01), Omura et al.
patent: 5528452 (1996-06-01), Ko
patent: 5585311 (1996-12-01), Ko
patent: 5591679 (1997-01-01), Jakobsen et al.
patent: 5706565 (1998-01-01), Sparks et al.
patent: 5741606 (1998-04-01), Mayer et al.
patent: 5844287 (1998-12-01), Hassan et al.
patent: 5929497 (1999-07-01), Chavan et al.
patent: 5936164 (1999-08-01), Sparks et al.
patent: 6020272 (2000-02-01), Fleming
patent: 6097821 (2000-08-01), Yokoyama et al.
patent: 6109113 (2000-08-01), Chavan et al.
patent: 6378381 (2002-04-01), Okada et al.
patent: 20020014126 (2002-02-01), Okada
patent: 100 05 536 (2000-08-01), None
patent: 0 727 650 (1996-08-01), None
patent: 10-509241 (1998-09-01), None
patent: 11-326095 (1999-11-01), None
patent: 2000-91663 (2000-03-01), None
patent: 2000-234977 (2000-08-01), None
Seidel, H., et al., “Anisotropic Etching of Crystalline Silicon in Alkaline Solutions,” J. Electrochem, Soc., vol. 137, No. 11, Nov. 1990, pp. 3626-3632.

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