Pressure sensor

Details Pressure sensor Pressure sensor

1984-12-13

1987-06-09

Larkins, William D.

357 51, 357 55, 357 60, H01L 2720

Patent

active

046724117

ABSTRACT:
Disclosed is a pressure sensor having a diaphragm formed in a semiconductor body, the diaphragm having at least one pair of pressure sensing semiconductor strips in a major surface thereof. One end of each of the strips is connected to each other by a semiconductor region. The semiconductor region is formed in a direction of small piezoresistive coefficients, and the strips are formed in a direction of great piezoresistive coefficients. Also, the region has a smaller resistance than the resistance of the strips. Also, electrode lead-out regions are provided at the other ends of the strips, which regions have low resistance, extend in a direction of small piezoresistive coefficients, and extend beyond the edge of the diaphram so the electrodes contact the semiconductor body outside the diaphragm. According to the present invention, a pressure sensor of high sensitivity and high precision can be provided.

REFERENCES:
patent: 4314226 (1982-02-01), Oguro et al.
patent: 4317126 (1982-02-01), Gragg, Jr.
patent: 4332000 (1982-05-01), Petersen
patent: 4345477 (1982-08-01), Johnson
patent: 4516148 (1985-05-01), Barth

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