Pressure sensor

Measuring and testing – Fluid pressure gauge – Diaphragm

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Details

73DIG4, 310338, 310360, 338 4, G01L 906

Patent

active

045037094

ABSTRACT:
A pressure sensor having a semiconductor body is disclosed. The sensor comprises a substrate of a compound semiconductor and an epitaxial layer of a mixed crystal, in which different conduction band minima with different effective masses are closely adjacent energywise, particularly from the mixed crystal series gallium-aluminum-arsenic with the composition Ga.sub.1-x Al.sub.x As, in which the aluminum concentration is 0.19.ltoreq.x.ltoreq.0.43. The sensor described has a simplified design and predetermined pressure ranges can be set by varying the concentration of the crystal constituents.

REFERENCES:
Philips Technische Rundschau 33, 1973/74, No. 1, pp. 15 to 22.

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