Pressure sensor

Electrical resistors – Resistance value responsive to a condition – Fluid- or gas pressure-actuated

Reexamination Certificate

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Details

C338S002000, C073S754000, C438S478000

Reexamination Certificate

active

07808365

ABSTRACT:
A diaphragm is formed at a predetermined location of a sensor chip made of semiconductor material, and a sensor gauge for differential pressure or pressure sensing-use is provided on the sensor chip that includes at least the diaphragm. The sensor gauge has a plurality of sensor gauges synergistically forming a bridge circuit, and are connected to one another with semiconductor resistors, the semiconductor resistors and the sensor gauges are covered with an insulating film, and the number of contact holes, passing through a portion of the insulating film, for electrode line-out use for forming contacts electrically connected to the semiconductor resistors does not exceed the number of sensor gauges.

REFERENCES:
patent: 3772628 (1973-11-01), Underwood
patent: 5142912 (1992-09-01), Frische
patent: 5220305 (1993-06-01), Nagatsu
patent: 5412993 (1995-05-01), Ohtani
patent: 5432372 (1995-07-01), Ohtani
patent: 5581226 (1996-12-01), Shah
patent: 6211772 (2001-04-01), Murakami et al.
patent: 2003/0217603 (2003-11-01), Ishio
patent: 0427179 (1991-05-01), None
patent: 05-283712 (1993-10-01), None
patent: 09-126922 (1997-05-01), None
patent: 2000-171318 (2000-06-01), None
patent: 2002-277337 (2002-09-01), None
Extended European Search Report dated Jun. 1, 2010 for EP 2008-250656: “Semiconductive diaphragm-type pressure sensor” (corresponding EP application to the instant U.S. Appl. No. 12/035,000.

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