Pressure sensitive semiconductor device with cantilevers

Electrical resistors – Incased – embedded – or housed – Element in insulation with outer metallic sheath

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357 25, 357 55, 357 51, 357 28, 73517R, 73777, 338 5, 361283, 280735, H01L 2984

Patent

active

051384140

ABSTRACT:
A semiconductor device comprises a semiconductor base having an aperture to form a first cantilever having a weight integral therewith, a second cantilever and a third cantilever. The second and third cantilevers are formed on the opposite sides of the first cantilever. The semiconductor device also comprises first and second piezo resistors formed in the first cantilevers, a third piezo resistor formed in the second cantilever, and a fourth piezo resistor formed in the third cantilever. The first, second, third and fourth piezo resistors are connected in a four-arm bridge circuit having a first pair of opposite arms comprised of the first and second piezo resistors, respectively, and a second pair of opposite arms comprised of the third and fourth piezo resistors, respectively, to compensate the first and second piezo resistors for temperature.

REFERENCES:
patent: 4836025 (1989-06-01), Mihara
patent: 4869107 (1989-09-01), Murakami
patent: 4920801 (1990-05-01), Church
patent: 4969359 (1990-11-01), Mikkor
patent: 4987781 (1991-01-01), Reimann

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