Pressure engagement structure for a full press-pack type semicon

Active solid-state devices (e.g. – transistors – solid-state diode – Regenerative type switching device – With housing or external electrode

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257182, 257688, 257689, H01L 2302

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active

052784347

ABSTRACT:
Coned disc springs (84, 86) lie between a gate extracting electrode (80G) held in a ringlike recess (63) of an external cathode electrode (60K) and a bottom surface of the ringlike recess (63). A semiconductor body (30) is pressed against an anode distortion buffering plate (50A) by a urging force of the coned disc springs (84, 86) for vertical positional fixation of the semiconductor body (30). This enables the semiconductor body to be prevented from damages and deformation in a full press-pack type semiconductor device.

REFERENCES:
patent: 4694322 (1987-09-01), Sakurai et al.
patent: 4719500 (1988-01-01), Tokunoh
patent: 5121189 (1992-06-01), Niwayama
Patent Abstracts of Japan, vol. 6, No. 185, (E-132)[1063], Sep. 21, 1982, & JP-A-57-100743, Jun. 23, 1982, M. Inoue, "Semiconductor Integrated Circuit Device".
Patent Abstracts of Japan, vol. 11, No. 179, (E-514)[2626], Jun. 9, 1987, & JP-A-62-10927, Jan. 19, 1987, Y. Hashimoto, "PLL Oscillation Circuit".

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