Measuring and testing – Fluid pressure gauge – Diaphragm
Patent
1994-01-03
1995-05-09
Goldstein, Herbert
Measuring and testing
Fluid pressure gauge
Diaphragm
73754, G01L 700
Patent
active
054129931
ABSTRACT:
A pressure detection gage for a semiconductor pressure sensor includes a gage portion, a pair of lead out portions, and an isolation layer. The gage portion is formed on the upper surface of a semiconductor substrate of the first conductivity type, has a predetermined sheet resistance, and serves as a piezoelectric region. The pair of lead out portions are formed as heavily doped semiconductor regions of the second conductivity type on the surface of the semiconductor substrate and are electrically connected to two ends of the gage portion. The isolation layer is formed from a lightly doped semiconductor region of the second conductivity type formed in the semiconductor substrate to surround the lead out portions.
REFERENCES:
patent: 3513430 (1970-05-01), Heller
patent: 4672354 (1987-06-01), Kurtz et al.
patent: 5165283 (1992-11-01), Kurtz et al.
patent: 5231301 (1993-07-01), Peterson et al.
patent: 5291788 (1994-03-01), Oohata et al.
patent: 5303544 (1994-04-01), Kurtz et al.
Biegel R. L.
Goldstein Herbert
Yamatake-Honeywell Co. Ltd.
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