Pressure detecting circuit for semiconductor pressure sensor

Measuring and testing – Fluid pressure gauge – With pressure and/or temperature compensation

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73727, 338 4, G01L 906, G01L 1904

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active

054088852

ABSTRACT:
A pressure detecting circuit compensating for temperature dependency of a zero point output voltage of a semiconductor pressure sensor. A differential amplifier circuit in a signal processing circuit of the semiconductor pressure sensor includes two transistors. Emitter currents in the two transistors are different in accordance with the temperature dependency of the zero point output voltage of a bridge circuit of a pressure detector. As a result, a difference will arise between the base-emitter voltages of the two transistors. The temperature dependency of the zero point output voltage of the bridge circuit is compensated for by the temperature dependency of the voltage differences of the base-emitter voltages.

REFERENCES:
patent: 4556807 (1985-12-01), Yamada et al.
patent: 4558238 (1985-12-01), Yamada et al.
patent: 4883992 (1989-11-01), Koglin et al.
patent: 5135002 (1992-08-01), Kirchner et al.
patent: 5146788 (1992-09-01), Raynes
Borky et al, "Integrated Signal Conditioning for Silicon Pressure Sensors", IEEE Transactions on Electron Devices, vol. ED-26, No. 12, Dec. 1979, pp. 1906-1910.

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