Patent
1991-02-27
1991-11-05
James, Andrew J.
357 65, 357 68, 357 38, 357 71, H01L 2974, H01L 2348, H01L 2940, H01L 2342
Patent
active
050634364
ABSTRACT:
In a pressure-contacted large-area power semiconductor element, in which a substrate (1) is compressed between an anode-side (20) and a cathode-side compression plate (19), an improved contact is obtained by arranging, at least between one of the compression plates (19,20) and the associated contact (2,9), a metal foil (17) which is soldered to this contact.
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H. Matsuda, T. Fujiwara and K. Nishitani; Design Optimization for Improving High Power GTO Switching Characteristics with `Alloy Free Technology`; pp. 240-245.
Gruning Horst
Keser Helmut
Asea Brown Boveri Ltd.
Deal Cynthia S.
James Andrew J.
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