Pressure contact type semiconductor device with axial bias and r

Details Pressure contact type semiconductor device with axial bias and r Pressure contact type semiconductor device with axial bias and r

1995-02-14

1997-06-24

Crane, Sara W.

Active solid-state devices (e.g., transistors, solid-state diode

Regenerative type switching device

With housing or external electrode

257181, 257182, 257688, 257719, 257727, 257785, H01L 2342, H01L 2344

Patent

active

056419767

ABSTRACT:
An alloy-free pressure contact type semiconductor device maintains a high reliability during transportation even without a pressure contact tool such as a simplified stack and therefore does not require a high transportation cost. Through holes (H1) and (H2) each having a circular cross section are formed in distortion buffer plates (21A) and (21K) at the center. A first and a second bottomed holes (i.e., recesses) (N1) and (N2) are formed in an anode electrode plate (41A) and a cathode electrode plate (41K). From the through hole (H1) up to the first bottomed hole (N1), a pressure contact pin (9) biased by a coil spring (8) is disposed. From the through hole (H2) down to the second bottomed hole (N2), a fixing pin (90) is disposed. Without applying external pressure upon the device, it is possible to prevent displacement of the first and the second distortion buffer plates due to vibration or impact during transportation and damage to a semiconductor body. Therefore, a transportation cost is low and the reliability of the device is high.

REFERENCES:
patent: 4956696 (1990-09-01), Hoppe et al.
patent: 5047836 (1991-09-01), Tokunoh
patent: 5121189 (1992-06-01), Niwayama
patent: 5371386 (1994-12-01), Tokunoh et al.
patent: 5489802 (1996-02-01), Sakamoto et al.
IBM Technical Disclosure Bulletin, vol. 36, No. 10, pp. 289-290, Oct. 1993, "Flip Chip Burn-In Socket".

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