Active solid-state devices (e.g. – transistors – solid-state diode – Regenerative type switching device
Reexamination Certificate
2005-03-08
2005-03-08
Nelms, David (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Regenerative type switching device
C257S107000, C257S718000
Reexamination Certificate
active
06864515
ABSTRACT:
Each of outermost segments (OMSG) and innermost segments (IMSG) is utilized as a dummy segment. A top surface of a protruding portion (OMPP, IMPP) of each of the outermost segments (OMSG) and the innermost segments (IMSG) is covered with an insulating layer (1S+1P), and a clearance (CL) is provided between a top surface of the insulating layer (1S+1P) and a bottom surface (2BS) of a cathode strain relief plate. Each of all the other segments (SG) than the outermost and innermost segments has a protruding portion PP on which a cathode electrode (1K-AL) is formed. A thickness (T1) of the cathode electrode (1K-AL) is determined so as to allow a top surface of the cathode electrode (1K-AL) to be in contact with the bottom surface (2BS) of the cathode strain relief plate.
REFERENCES:
patent: 5021855 (1991-06-01), Oikawa et al.
patent: 5777506 (1998-07-01), Kurachi et al.
patent: 61-5533 (1986-01-01), None
patent: 62-7163 (1987-01-01), None
patent: 63-318161 (1988-12-01), None
patent: 3191653 (2001-05-01), None
Fukaura Teruya
Nakashima Nobuhisa
Oota Kenji
Mitsubishi Denki & Kabushiki Kaisha
Nguyen Thinh T
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