Pressure-contact type semiconductor device

Details Pressure-contact type semiconductor device Pressure-contact type semiconductor device

1996-11-06

1999-02-23

Crane, Sara W.

Active solid-state devices (e.g., transistors, solid-state diode

Regenerative type switching device

Combined with field effect transistor

257139, 257785, H01L 2974, H01L 31111

Patent

active

058747508

ABSTRACT:
A pressure-contact type semiconductor device such as an insulated gate bipolar transistor. The device includes semiconductor chip, a gate electrode on a first surface of the semiconductor chip, an emitter electrode insulated and separated from the gate electrode, and an emitter sensing electrode on the first surface of the semiconductor chip. A collector layer is on the second surface of the semiconductor chip. The emitter sensing electrode monitors the emitter voltage. Because the emitter sensing electrode is on the semiconductor chip, the emitter sensing electrode is not influenced by inductance between an emitter and an emitter terminal.

REFERENCES:
patent: 4965710 (1990-10-01), Pelly et al.
patent: 5245202 (1993-09-01), Yasukazu
patent: 5337214 (1994-08-01), Lindsey et al.
patent: 5530277 (1996-06-01), Otsuki et al.
patent: 5596466 (1997-01-01), Ochi
patent: 5641976 (1997-06-01), Taguchi

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