Active solid-state devices (e.g. – transistors – solid-state diode – Regenerative type switching device – With housing or external electrode
Patent
1994-07-26
1996-07-23
Brown, Peter Toby
Active solid-state devices (e.g., transistors, solid-state diode
Regenerative type switching device
With housing or external electrode
257691, 257724, 257726, 257785, H01L 23051, H01L 2310
Patent
active
055392202
ABSTRACT:
A module-type semiconductor device in which a plurality of IGBTs are incorporated in a package in such a way so as to provide a highly reliable pressure contact type semiconductor device having improved heat dissipation performance and small internal wiring inductance. A plurality of IGBTs are incorporated and arranged in a flat package with a hermetic structure consisting of common electrode plates exposed to top and bottom face sides, and an insulating outer frame interposed between the common electrodes plates and seal-joining those electrode plates. Contact terminal bodies which serve as both pressing members and heat radiators are interposed between the top-face-side common electrode plate and emitter electrodes of the respective opposing IGBTs. The emitter electrodes of the IGBTs and the common electrode, and the collector electrodes and the bottom-face-side common electrode, are directly brought in pressure contact with each other. Gate electrodes of the respective IGBTs are individually connected to a gate wiring conductor located on an inner wall of an insulating outer frame by gate wire leads.
REFERENCES:
patent: 4313128 (1982-01-01), Schlegel et al.
patent: 5221851 (1993-06-01), Gobrecht et al.
patent: 5250821 (1993-10-01), Ferla et al.
Patent Abstracts of Japan, Kokai Publication #4-160708 (Apr. 6, 1992) vol. 16 No. 453 (E-1267) Abstract date Aug. 21, 1992.
Brown Peter Toby
Fuji Electric & Co., Ltd.
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