Pressure contact semiconductor device

Details Pressure contact semiconductor device Pressure contact semiconductor device

1986-08-21

1988-10-04

Pellinen, A. D.

Electricity: electrical systems and devices

Electrostatic capacitors

Fixed capacitor

361389, 174 52FP, 174525, 357 76, 357 79, H01L 2332, H01L 2340

Patent

active

047759160

ABSTRACT:
A pressure contact semiconductor device has a semiconductor substrate disposed on a metal post electrode through metal electrode plate, an insulating ring engaged with the periphery of the metal post electrode extends to the periphery of the metal electrode plate and is brought into contact therewith at a certain height with a sufficient contact pressure. The semiconductor substrate is positioned precisely with respect to the metal post electrode so that a gate electrode ring is precisely positioned on a gate electrode film formed on the upper surface of the semiconductor substrate.

REFERENCES:
patent: 3890637 (1975-06-01), Yamamoto
patent: 4099201 (1978-07-01), Mueller
patent: 4188637 (1980-02-01), Gerstenkoper et al.
patent: 4587550 (1986-05-01), Matsuda
patent: 4646130 (1987-02-01), Creutz

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