Pressure contact housing for semiconductor components

Details Pressure contact housing for semiconductor components Pressure contact housing for semiconductor components

1996-02-01

1998-04-14

Saadat, Mahshid D.

Active solid-state devices (e.g., transistors, solid-state diode

Regenerative type switching device

With housing or external electrode

257138, 257147, 257153, 257181, 257150, 257178, 257688, 257785, H01L 2974, H01L 31111, H01L 2348

Patent

active

057395560

ABSTRACT:
In a pressure contact housing for semiconductor components, the gate electrode contact ring 4 is provided with spiral recesses 5. The latter can absorb axial movements produced during the assembly of the housing, without loading the material. A good and durable electrical contact between the gate electrode and the gate electrode contact ring is obtained thereby.

REFERENCES:
patent: 4092703 (1978-05-01), Sueoka et al.
patent: 4238761 (1980-12-01), Schlegel et al.
patent: 4529999 (1985-07-01), Bender et al.
patent: 4737834 (1988-04-01), Spenke et al.
patent: 5121189 (1992-06-01), Niwayama
patent: 5345096 (1994-09-01), Gruning

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