Pressure-connection type semiconductor device having a thermal c

Details Pressure-connection type semiconductor device having a thermal c Pressure-connection type semiconductor device having a thermal c

1994-11-15

1996-05-21

Hille, Rolf

Active solid-state devices (e.g., transistors, solid-state diode

Regenerative type switching device

With housing or external electrode

257688, H01L 2342

Patent

active

055192319

ABSTRACT:
In order to obtain a pressure-connection type semiconductor device while preventing misregistration of a semiconductor base substrate and a thermal compensator with no penetration of an insulating/holding material and a method suitable for fabricating this device, concentric first and second steps (31c, 31a) are provided on an upper major surface of a first thermal compensator (31) from its outer periphery toward the center. A corner groove (3b) is provided along the overall periphery of an inner comer of the first step (31c), in the form of a ring. Since no insulating/holding material is provided in a contact surface between the semiconductor the substrate and the thermal compensator, the semiconductor base substrate and the thermal compensator are maintained in excellent electrical contact while no local stress is applied to the semiconductor substrate when the same is brought into pressure contact with the thermal compensator.

REFERENCES:
patent: 3800192 (1974-03-01), Eisele et al.
patent: 4829364 (1989-05-01), Ohdate
patent: 5371386 (1994-12-01), Tokunoh et al.

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