Pressure-applied type semiconductor device

Details Pressure-applied type semiconductor device Pressure-applied type semiconductor device

1982-09-17

1985-02-19

James, Andrew J.

357 65, 357 68, H01L 21603, H01L 2304, H01L 2310

Patent

active

045009074

ABSTRACT:
A pressure-applied type semiconductor device, in which a metal stamp for urging a semiconductor body is formed with a peripheral annular groove. When pressure is applied, the groove is elastically deformed. Thus, stress concentration in the semiconductor body directly under the edge of the metal stamp can be alleviated.

REFERENCES:
patent: 3434017 (1969-03-01), Schlosshauer et al.
patent: 3452254 (1969-06-01), Boyer
patent: 3548267 (1970-12-01), Siddell et al.
patent: 3890637 (1975-06-01), Yamamoto
"Chip Packaging Structure with Enhanced Cooling" Berdimaier et al.-IBM Technical Disclosure-vol. 20, No. 5, 10-1977 p. 1772-1773.
"Heat Transfer Apparatus"-Andros et al.-IBM Technical Disclosure-vol. 22, No. 8A, 1-1980 p. 3166.

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