Pressed-contact type semiconductor device

Details Pressed-contact type semiconductor device Pressed-contact type semiconductor device

2007-12-11

2007-12-11

Jackson, Jerome (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Regenerative type switching device

Bidirectional rectifier with control electrode

C257SE29212

Reexamination Certificate

active

11212562

ABSTRACT:
A P++-type first diffusion layer is formed by diffusing P-type impurities on a front side of an N−-type semiconductor substrate, and an N-type fourth diffusion layer which is shallower than the first diffusion layer is formed by diffusing N-type impurities on the front side, and a P-type second diffusion layer is locally formed in a ring-shape so as to be exposed on the lateral side by diffusing P-type impurities on the back side, and P-type impurities are diffused on the back side of the substrate and a P+-type third diffusion layer is locally formed so as to be distributed inward from the second diffusion layer and not to be exposed to the lateral side, and the P-type second diffusion layer and the P+-type third diffusion layer are formed in the two-stage structure, thereby various characteristics can be improved.

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U.S. Appl. No. 11/212,562, filed Aug. 29, 2005, Yamaguchi et al.
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