Pressed-contact type semiconductor device

Details Pressed-contact type semiconductor device Pressed-contact type semiconductor device

2005-09-13

2005-09-13

Jackson, Jerome (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Regenerative type switching device

With means to increase breakdown voltage

C257S168000, C257S153000

Reexamination Certificate

active

06943382

ABSTRACT:
A P++-type first diffusion layer is formed by diffusing P-type impurities on a front side of an N−-type semiconductor substrate, and an N-type fourth diffusion layer which is shallower than the first diffusion layer is formed by diffusing N-type impurities on the front side, and a P-type second diffusion layer is locally formed in a ring-shape so as to be exposed on the lateral side by diffusing P-type impurities on the back side, and P-type impurities are diffused on the back side of the substrate and a P+-type third diffusion layer is locally formed so as to be distributed inward from the second diffusion layer and not to be exposed to the lateral side, and the P-type second diffusion layer and the P+-type third diffusion layer are formed in the two-stage structure, thereby various characteristics can be improved.

REFERENCES:
patent: 4377816 (1983-03-01), Sittig
patent: 4752818 (1988-06-01), Kushida et al.
patent: 5710442 (1998-01-01), Watanabe et al.
patent: 6163040 (2000-12-01), Akiyama et al.
patent: 0419 898 (1991-04-01), None
patent: 3-120724 (1991-05-01), None
patent: 8-116047 (1996-05-01), None
patent: 8-264754 (1996-10-01), None
patent: 9-260640 (1997-10-01), None

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