Press contact type semiconductor device

Details Press contact type semiconductor device Press contact type semiconductor device

1995-12-05

1997-05-27

Crane, Sara W.

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

By pressure alone

257181, 257688, H01L 2348, H01L 2352, H01L 2940

Patent

active

056335369

ABSTRACT:
Provided is a press contact type semiconductor device which improves the shape of an insulator formed along an outer peripheral edge and a major surface of a semiconductor substrate, simplifies alignment of an anode heat compensator and a cathode heat compensator, causes no biting, causes no separation in molding, and has excellent heat dissipation. In the press contact type semiconductor device, the inner periphery of a ring-shaped insulator (22) which is formed along an edge of the overall periphery and a major surface of a semiconductor substrate (6) provided with a P-N junction in its interior comprises a tapered portion (22a) along the inner peripheral direction and a vertical portion (22b) forming a perpendicular inner peripheral diameter which is continuous to this tapered portion (22a).

REFERENCES:
patent: 3586932 (1971-06-01), Kokosa
patent: 3931635 (1976-01-01), Sundstroem
patent: 5371386 (1994-12-01), Tokunoh et al.

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