Press-contact type semiconductor device

Details Press-contact type semiconductor device Press-contact type semiconductor device

1993-06-01

1994-11-01

Mintel, William

Active solid-state devices (e.g., transistors, solid-state diode

Regenerative type switching device

With housing or external electrode

257688, 257773, H01L 2302

Patent

active

053609859

ABSTRACT:
In a semiconductor device, a pellet electrode, which is formed on a mesa-shaped pellet, and an external electrode, with which a package is provided, are in pressure-contact with each other. A soft-metal plate which has projections along its surface is arranged between the external electrode and the pellet electrode.

REFERENCES:
patent: 3893153 (1975-07-01), Page et al.
patent: 4881118 (1989-11-01), Niwayama et al.
patent: 4918514 (1990-04-01), Matsuda et al.
patent: 4937653 (1990-06-01), Blonder et al.
patent: 4958215 (1990-09-01), Kojima et al.
patent: 4996586 (1991-02-01), Matsuda et al.
Patent Abstracts of Japan, vol. 4, No. 126(E-024), Sep. 5, 1980, & JP-A-55-078535, Jun. 13, 1980, M. Odate, "Pressure-Contact Type Semiconductor Device".
Patent Abstracts of Japan, vol. 3, No. 117(E-141), Sep. 29, 1979, & JP-A-54-095183, Jul. 27, 1979, M. Odate, "Pressure Contact-Type Semiconductor Device".
Research Disclosure, Mar. 1988, p. 155, "Method to Provide Multiple Dendritic Contact Points for High Density Flat on Flat Connector System".

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