Preparing thin film of oxide superconductor

Details Preparing thin film of oxide superconductor Preparing thin film of oxide superconductor

1992-10-19

1994-05-24

King, Roy V.

Superconductor technology: apparatus, material, process

Processes of producing or treating high temperature...

Coating

505730, 505731, 505701, 505702, 20419224, 427 62, 4271263, 4274193, 427314, B05D 512, C23C 1434

Patent

active

053148703

ABSTRACT:
A process for preparing a thin film of oxide superconductor on a single crystal substrate of semiconductor by RF sputtering. At first, an under-layer of an oxide having a thickness of 50 to 200 .ANG. is deposited on the single crystal substrate of semiconductor at a substrate temperature of lower than 500.degree. C., and secondly an upper-layer of superconducting oxide material is deposited on said under-layer at a substrate temperature of higher than 600.degree. C.

REFERENCES:
patent: 4880770 (1989-11-01), Mir et al.
Lin et al, "In situ growth of superconducting Y-Ba-Cu-O Films on Si, SiO.sub.2, GaAs and Cu/Ag by the high-pressure DC sputtering process", Jpn. J. Appl. Phys. 28(12) Dec. 1989 pp. L2200-L2203.
Harada et al, "Y-Ba-Cu-O Thin Film on Si Substrate", Jpn. J. Appl. Phys. 27(8) Aug. 1988 L1524-1526.
Witanachchi et al. "As-deposited Y-Ba-Cu-O superconducting films on silicon at 400.degree. C.," Appl. Phys. Lett. 54(6) Feb. 1989 pp. 578-580.

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