Preparation process of semiconductor wafer

Details Preparation process of semiconductor wafer Preparation process of semiconductor wafer

1999-04-05

2000-12-12

Niebling, John F.

Semiconductor device manufacturing: process

Semiconductor substrate dicing

With attachment to temporary support or carrier

438460, 438759, 438928, 438974, 438976, 438977, 156344, H01L 2146, H01L 2178

Patent

active

061598275

ABSTRACT:
An object of the invention is to provide a preparation process of a semiconductor wafer, in which breakage of the wafer on grinding the back surface of the wafer and on peeling the adhesive tape is prevented, and the operation time can be reduced. The preparation process of a semiconductor wafer comprises the steps of: adhering an adhesive tape on a front surface of a semiconductor wafer; grinding a back surface of the semiconductor wafer by a grinding machine; peeling the adhesive tape; and cleaning the front surface of the semiconductor wafer, wherein an adhesive tape having heat shrinkability is used as the adhesive tape, and after grinding the back surface of the semiconductor wafer, warm water at a temperature of from 50 to 99.degree. C. is poured to peel the adhesive tape in a wafer cleaning machine, and the front surface of the semiconductor wafer is cleaned in the wafer cleaning machine.

REFERENCES:
patent: 5853533 (1998-12-01), Yasunaga et al.
patent: 5976954 (1999-11-01), Kimura et al.

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