Preparation process for semiconductor device

Details Preparation process for semiconductor device Preparation process for semiconductor device

2005-09-27

2005-09-27

Lebentritt, Michael (Department: 2812)

Semiconductor device manufacturing: process

Chemical etching

C438S758000

Reexamination Certificate

active

06949465

ABSTRACT:
According to this invention, residues generated after selectively removing a low-dielectric-constant film such as SiOC can be effectively removed without damage on an insulating film or metal film. Specifically, residues126and128generated after forming an interconnect trench in an SiOC film116are removed using a fluoride-free weak alkaline amine stripper. After the removing step, the wafer is rinsed with isopropyl alcohol and then dried without drying with pure water.

REFERENCES:
patent: 6091130 (2000-07-01), Oyamatsu et al.
patent: 6149828 (2000-11-01), Vaartstra
patent: 6277749 (2001-08-01), Funabashi
patent: 6465403 (2002-10-01), Skee
patent: 6602787 (2003-08-01), Komai et al.
patent: 6805139 (2004-10-01), Savas et al.

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