Preparation of tertiarybutyldimethylantimony and use thereof

Details Preparation of tertiarybutyldimethylantimony and use thereof Preparation of tertiarybutyldimethylantimony and use thereof

1993-01-28

1994-07-05

Dees, Jose G.

Single-crystal, oriented-crystal, and epitaxy growth processes;

Forming from vapor or gaseous state

With decomposition of a precursor

556 70, 117939, 117953, C30B 2502, C07F 990

Patent

active

053264258

ABSTRACT:
The new compound tertiarybutyldimethylantimony is prepared by reacting an timony trihalide SbX.sub.3 with the tertiarybutyl Grignard reagent ((CH.sub.3).sub.3 C)MgX, treating the resulting product with the methyl Grignard reagent (CH.sub.3)MgX. where X is a halide, and recovering tertiarybutyldimethylantimony from the reaction mixture. The reaction is preferably carried out by a one pot synthesis in a suitable solvent such as diethyl either using approximately one equivalent of ((CH.sub.3).sub.3 C)MgX in relation to the SbX.sub.3 at about -50.degree. C., followed by treatment with approximately two equivalents of (CH.sub.3)MgX in relation to the SbX.sub.3 at about 0.degree. C. The tertiarybutyldimethylantimony is used as a precursor in forming antimony-containing semiconductor material by chemical vapor deposition.

REFERENCES:
patent: 4517047 (1985-05-01), Chang et al.
patent: 4904616 (1990-02-01), Bohling et al.
Chen et al., Appl. Phys. Lett., vol. 61, No. 2, pp. 204-206 (1992).
Cao et al., J. Electron, Mater., vol. 21, pp. 583-588 (1992).

Affiliated with

Also associated with

Rating

Preparation of tertiarybutyldimethylantimony and use thereof does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Preparation of tertiarybutyldimethylantimony and use thereof, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Preparation of tertiarybutyldimethylantimony and use thereof will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-794181