Preparation of silicon melt for use in pull method of manufactur

Details Preparation of silicon melt for use in pull method of manufactur Preparation of silicon melt for use in pull method of manufactur

1994-12-07

1995-12-26

Breneman, R. Bruce

Single-crystal, oriented-crystal, and epitaxy growth processes;

Processes of growth from liquid or supercritical state

Having pulling during growth

117 20, C30B 1520

Patent

active

054778050

ABSTRACT:
A Si material mixed with Group-V element is melted in a crucible, and then held in a chamber filled with a rare gas at atmospheric pressure of 100 torr. or higher. A rare gas, e.g. Ar, Kr, Xe or Rn, having a large mass or the mixture of Ar with Kr, Xe or Rn may be used as atmospheric gas. The high-pressure atmosphere suppress the evaporation of oxides of Group-V elements from the Si melt, so that the Si melt can be maintained at a high oxygen concentration under a stable condition until the start of pulling operation.

REFERENCES:
patent: 4591409 (1986-05-01), Ziem et al.

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