Preparation of silicon doped mercury cadmium telluride

Details Preparation of silicon doped mercury cadmium telluride Preparation of silicon doped mercury cadmium telluride

1978-02-06

1978-08-08

Ozaki, G.

Metal treatment

Compositions

Heat treating

136 89ST, 252 623ZT, 357 11, H01L 2102

Patent

active

041054725

ABSTRACT:
Mercury cadmium telluride is described having a quantity of a silicon dispersed therein in an amount to measurably increase the donor concentration of the mercury cadmium telluride. Silicon has been found to substitute for metal, either mercury or cadmium, in the mercury cadmium telluride crystal. Doping of a region of mercury cadmium telluride with silicon can produce a PN junction when the adjacent region is P-type, and an N-N+ type junction when the adjacent region is N-type.

REFERENCES:
patent: 3191045 (1965-06-01), Colman
patent: 3740690 (1973-06-01), Schornhorst

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