Preparation of semiconductor substrates

Single-crystal – oriented-crystal – and epitaxy growth processes; – Processes of growth with a subsequent step acting on the...

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117 3, 117953, C20B 104

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060367695

ABSTRACT:
An indium phosphate semiconductor substrate is prepared for subsequent growth of epitaxial layers to form a semiconductor device. In the preparation, the substrate is first annealed to promote any tendency for surface accumulation of impurity atoms by diffusion from the substrate and to promote impurity atom removal from the surface of the substrate. The substrate is then surface etched to remove further impurities and to provide a clean, flat surface for subsequent epitaxial layer growth. The final stage of preparation involves growing a semi-insulating buffer layer on the substrate to isolate the device epitaxial layers from the substrate.

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Ishikawa et al, "Origin of n-Type Conduction at the Interface Between Epitaxial-Grown Layer and InP Substrate and its Suppression by Heating in Phosphine Atmosphere", Journal of Applied Physics, Apr. 15, 1992, USA, vol. 71, No. 8, ISSN 0021-8979, pp. 3898-3903.
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