Preparation of semiconductor substrates

Details Preparation of semiconductor substrates Preparation of semiconductor substrates

1996-12-30

2000-03-14

Kunemund, Robert

Single-crystal, oriented-crystal, and epitaxy growth processes;

Processes of growth with a subsequent step acting on the...

117 3, 117953, C20B 104

Patent

active

060367695

ABSTRACT:
An indium phosphate semiconductor substrate is prepared for subsequent growth of epitaxial layers to form a semiconductor device. In the preparation, the substrate is first annealed to promote any tendency for surface accumulation of impurity atoms by diffusion from the substrate and to promote impurity atom removal from the surface of the substrate. The substrate is then surface etched to remove further impurities and to provide a clean, flat surface for subsequent epitaxial layer growth. The final stage of preparation involves growing a semi-insulating buffer layer on the substrate to isolate the device epitaxial layers from the substrate.

REFERENCES:
patent: 4629532 (1986-12-01), Yanase et al.
patent: 4660208 (1987-04-01), Johnston, Jr. et al.
patent: 4999315 (1991-03-01), Johnston et al.
patent: 5242857 (1993-09-01), Cooper et al.
Ishikawa et al, "Origin of n-Type Conduction at the Interface Between Epitaxial-Grown Layer and InP Substrate and its Suppression by Heating in Phosphine Atmosphere", Journal of Applied Physics, Apr. 15, 1992, USA, vol. 71, No. 8, ISSN 0021-8979, pp. 3898-3903.
Patent Abstracts of Japan, vol. 015, No. 397 (E-1120), Oct. 8, 1991 & JP,A,03 161922 (NEC Corp) Jul. 11, 1991.
Ishikawa et al, "Highly Resistive Iron-Doped AllnAs Layers Grown by Metalorganic Chemical Vapor Deposition", Japanese Journal of Applied Physics, Part 2 (Letters), Apr. 1, 1992, Japan, vol. 31, No. 4A, ISSN 0021-4922, pp. L376-L378.
Patent Abstracts of Japan, vol. 013, No. 549 (C-662), Dec. 7, 1989 & JP,A,01,226796 (Sumitomo Electric Ind Ltd) Sep. 11, 1989.

Affiliated with

Also associated with

Rating

Preparation of semiconductor substrates does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Preparation of semiconductor substrates, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Preparation of semiconductor substrates will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-165017