Preparation of semiconductor devices

Details Preparation of semiconductor devices Preparation of semiconductor devices

1989-08-03

1991-01-01

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

148DIG15, 148DIG119, 437 85, 437933, 437247, 437939, 437945, H01L 2120, H01L 21324

Patent

active

049818147

ABSTRACT:
It has been found that layers which include arsenic and/or zinc can have an adverse effect upon optoelectronic semiconductor devices such as lasers. This is reduced by treatments in which arsenic and zinc are excluded. Preferably the substrate is cooled from reaction temperature in the presence of a mixture of hydrogen and PH.sub.3 (replacing AsH.sub.3 and/or Zn(CH.sub.3).sub.2 used to grow the final layer). Alternatively, devices have a contact layer of heavily p-type gallium indium arsenide are improved by the deposition of a protective layer of indium phosphide. This layer is removed immediately before metalization. Even though the protective layer is not present in the final product it has a beneficial effect.

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