Preparation of photodiodes

Details Preparation of photodiodes Preparation of photodiodes

1983-06-13

1984-06-19

Pianalto, Bernard D.

Stock material or miscellaneous articles

Composite

Of silicon containing

427 39, 427 87, 427 94, 428446, 428697, 428698, 428699, B32B 906

Patent

active

044553510

ABSTRACT:
A process is described for fabricating various optical devices including photodiodes in which a protective dielectric layer is put down on the surface of the device prior to heating to temperatures over about 250-300 degrees C. Such devices have excellent performance characteristics including low dark current and low noise figures.

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